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INC6005AC1

Isahaya Electronics
Part Number INC6005AC1
Manufacturer Isahaya Electronics
Description TRANSISTOR
Published Apr 9, 2016
Detailed Description DESCRIPTION INC6005AC1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Super mini package for ea...
Datasheet PDF File INC6005AC1 PDF File

INC6005AC1
INC6005AC1


Overview
DESCRIPTION INC6005AC1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE ・Super mini package for easy mounting ・High voltage VCEO=400V APPLICATION DC/DC convertor, High voltage switching 2.
8 1.
90 0.
95 0.
95 0.
4 INC6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 2.
8 0.
65 1.
5 0.
65 UNIT:mm ① ②③ 1.
1 0.
8 0~0.
1 0.
13 MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:SC-59 JEDEC: Similar to TO-236 RATING 400 7 400 100 200 +150 -55~+150 UNIT V V V mA mW ℃ ℃ MARKING Type Name C LA ELECTRICAL CHARACTERISTICS(Ta=25℃) SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE VCE(sat) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain bandwidth product Collector output capacitance I C=50μA,I E=0mA I E=50μA,I C=0mA I C=1mA,R BE=∞ VCB=400V,I E =0mA VEB=6V,I C=0mA VCE=10V,I C=1mA I C=10mA,I B=1mA VCE=20V,I E=-10mA,f=100MHz VCB=10V,I E=0mA,f=1MHz LIMITS MIN TYP MAX 400 - - 7- - 400 - - -- 1 -- 1 82 - 280 - - 0.
5 - 70 - - 3.
3 - UNIT V V V μA μA V MHz pF ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS 1000 DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT VCE=10V Ta=100℃ DC FORWARD CURRENT GAIN hFE(-) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) 100 Ta=-40℃ Ta=25℃ 10 0.
1 1 10 COLLECTOR CURRENT IC(mA) 100 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VS.
COLLECTOR CURRENT IC/IB=10 Ta=25℃ 100 Ta=100℃ Ta=-40℃ 10 0.
1 1 10 100 COLLECTOR CURRENT IC(mA) GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT 150 Ta=25℃ VCE=20V 100 50 BASE TO EMITTER SATURATION VOLTAGE VBE(sat)(V) C...



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