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1N5818

Part Number	1N5818
Manufacturer	MotorolaInc
Description	SCHOTTKY BARRIER RECTIFIERS
Published	Mar 23, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schot...
Datasheet	1N5818 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers .
.
.
employing the Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.
4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal...

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