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SPR50N03

SeCoS
Part Number SPR50N03
Manufacturer SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 11, 2016
Detailed Description Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pro...
Datasheet PDF File SPR50N03 PDF File

SPR50N03
SPR50N03

Overview
Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 50N03 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF.
A B C D E F Millimeter Min.
Max.
4.
9 5.
1 5.
7 5.
9 5.
95 6.
2 1.
27 BSC.
0.
35 0.
49 0.
1 0.
2 REF.
G H I J K L Millimeter Min.
Max.
0.
8 1.
0 0.
254 Ref.
4.
0 Ref.
3.
4 Ref.
0.
6 Ref.
1.
4 Ref.
SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA=70°C VDS VGS ID IDM EAS 30 ±20 51 36 12 9.
6 130 130 Avalanche Current Power Dissipation 4 TC=25°C IAS PD 34 46 Operating Junction & Storage Temperature TJ, TSTG -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA RθJC 62 2.
7 Unit V V A A A A A mJ A W °C °C / W °C / W http://www.
SeCoSGmbH.
com/ 20-May-2014 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250uA Gate-Threshold Voltage VGS(th) 1 - 2.
5 V VDS=VGS, ID=250uA Forward Tranconductanc...


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