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1N5821

Part Number	1N5821
Manufacturer	MotorolaInc
Description	SCHOTTKY BARRIER RECTIFIERS
Published	Mar 23, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employin...
Datasheet	1N5821 PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers .
.
.
employing the Schottky Barrier principle in a large area metal–to–silicon power diode.
State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.
1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant ...

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