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FZT549

Kexin
Part Number FZT549
Manufacturer Kexin
Description PNP Transistors
Published Apr 14, 2016
Detailed Description SMD Type Transistors PNP Transistors FZT549 (KZT549) ■ Features ● Collector Current Capability IC=-1A ● Collector Emi...
Datasheet PDF File FZT549 PDF File

FZT549
FZT549

Overview
SMD Type Transistors PNP Transistors FZT549 (KZT549) ■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-30V SOT-223 6.
50±0.
2 3.
00±0.
1 4 7.
0±0.
3 3.
50±0.
2 123 10 Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature range ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base-Emitter Turn-On Voltage DC current gain (Note.
1) Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating -35 -30 -5 -1 -2 2 150 -55 to 150 1.
80 (max) 0.
02 ~ 0.
1 2.
30 (typ) 4.
60 (typ) 0.
70±0.
1 0.
250 Gauge Plane 1.
Base 2.
Collector 3.
Emitter 4.
Collector Unit V A W ℃ Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -10 mA， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -30 V , IE=0 VCB= -30 V , IE=0 ,Ta = 100℃ IEBO VEB= -4V , IC=0 IC=-1 A, IB=-100mA (Note.
1) VCE(sat) IC=-2 A, IB=-200mA (Note.
1) VBE(sat) IC=-1 A, IB=-100mA (Note.
1) VBE(on) VCE= -2V, IC= -1A (Note.
1) hFE(1) VCE= -2V, IC= -50mA hFE(2) VCE= -2V, IC= -500mA hFE(3) VCE= -2V, IC= -1 A hFE(4) VCE= -2V, IC= -2 A Cob VCB= -10V, f=10MHz fT VCE= -5V, IC= -100mA,f=100MHz Min Typ Max Unit -35 -30 V -5 -0.
1 -10 uA -0.
1 -0.
5 -0.
75 -1.
25 V -1 70 100 300 80 30 10 pF 100 MHz Note.
1: Pulse width=300us.
Duty cycle ≤ 2% www.
kexin.
com.
cn 1 ...


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