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AP2530GY-HF

Part Number	AP2530GY-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Apr 14, 2016
Detailed Description	Advanced Power Electronics Corp. AP2530GY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low ...
Datasheet	AP2530GY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2530GY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free S1 D1 SOT-26 D2 G2 S2 G1 Description AP2530 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercialindustrial applications.
N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 30V 72mΩ 3.
3A -30V 150mΩ -2.
3A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 30 +20 3.
3 2.
6 10 1.
14 0.
01 -30 +20 -2.
3 -1.
8 -10 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201501215 AP2530GY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=3A VGS=4.
5V, ID=2A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=5V, ID=3A Drain-Source Leakage Current VDS=30V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V Gate-Source Leakage Total Gate...

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AP2530GY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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