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AP2535GEY-HF

Part Number	AP2535GEY-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Apr 14, 2016
Detailed Description	Advanced Power Electronics Corp. AP2535GEY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Cap...
Datasheet	AP2535GEY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2535GEY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 1.
8V Gate Drive ▼ Lower Gate Charge D2 S1 D1 ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-26 G2 S2 G1 Description AP2535 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SOT-26 package is widely used for commercial surface mount applications.
N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 20V 32mΩ 4.
6A -20V 80mΩ -3.
1A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 20 -20 +8 +8 4.
6 -3.
1 3.
7 -2.
5 12 -12 V V A A A PD@TA=25℃ Total Power Dissipation 1.
13 W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201501212 AP2535GEY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=4.
5V, ID=3A VGS=2.
5V, ID=2A VGS=1...

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AP2535GEY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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