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AP2530AGY-HF

Part Number	AP2530AGY-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Apr 14, 2016
Detailed Description	Advanced Power Electronics Corp. AP2530AGY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low...
Datasheet	AP2530AGY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2530AGY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Performance D2 S1 D1 ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free SOT-26 G2 S2 G1 N-CH P-CH Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount applications.
BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 30V 72mΩ 3.
3A -30V 150mΩ -2.
3A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 3.
3 -2.
3 2.
7 -1.
8 12 -10 1.
136 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201501212 AP2530AGY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.
5V, ID=2A VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=24V, VGS=0V VGS=+20V, VDS=0V ID=3A VDS=15V VGS=4.
5V VDS=15V ID=1A RG=3.
3Ω VGS=10V...

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AP2530AGY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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