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AP2533GY-HF

Part Number	AP2533GY-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Apr 14, 2016
Detailed Description	Advanced Power Electronics Corp. AP2533GY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low ...
Datasheet	AP2533GY-HF PDF File

Overview

Advanced Power Electronics Corp.
AP2533GY-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Performance D2 S1 D1 ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free SOT-26 G2 S2 G1 Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface mount applications.
N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 16V 150mΩ 2.
2A -16V 320mΩ -1.
5A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating N-channel 16 P-channel -16 +8 +8 2.
2 -1.
5 1.
8 -1.
2 8.
0 -6.
0 1.
14 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201008171 AP2533GY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=250uA VGS=4.
5V, ID=2A VGS=2.
5V, ID=1.
5A VGS=1.
8V, ID=0.
5A VDS=VGS, ID=250uA VDS=5V, ID=2A VDS=12V, VGS=0V VGS=+8V, VDS=0V ID=2A VDS=10V VGS=4.
5V VDS=10V ID=1A RG=3.
3Ω VGS=5V VGS=0V VDS=16V f=1.
0MHz 16 - -V -...

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AP2533GY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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