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VS-6CSH02HM3

Vishay
Part Number VS-6CSH02HM3
Manufacturer Vishay
Description Hyperfast Rectifier
Published Apr 15, 2016
Detailed Description www.vishay.com VS-6CSH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt® K 1 2 TO-277A (SMPC) K Catho...
Datasheet PDF File VS-6CSH02HM3 PDF File

VS-6CSH02HM3
VS-6CSH02HM3

Overview
www.
vishay.
com VS-6CSH02HM3 Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt® K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.
) TJ max.
Diode variation TO-277A (SMPC) 2x3A 200 V 0.
94 V 27 ns 175 °C Dual die DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers and freewheeling diodes.
The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current per device per diode Non-repetitive peak surge current per device per diode Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TEST CONDITIONS TSp = 165 °C TJ = 25 °C, 6 ms square pulse VALUES 200 6 3 150 80 -65 to +175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN.
Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 200 Forward voltage, per diode IF = 3 A VF IF = 3 A, TJ = 125 °C - Reverse leakage current, per diode VR = VR rated IR TJ = 125 °C, VR = VR rated -...


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