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VBT6045CBP-M3

Vishay
Part Number VBT6045CBP-M3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Apr 15, 2016
Detailed Description www.vishay.com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypa...
Datasheet PDF File VBT6045CBP-M3 PDF File

VBT6045CBP-M3
VBT6045CBP-M3


Overview
www.
vishay.
com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
33 V at IF = 10 A TMBS ® TO-263AB K 2 1 VBT6045CBP PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max.
in solar bypass mode application • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 30 A 45 V 320 A VF at IF = 30 A 0.
47 V TOP max.
(AC mode) TJ max.
(DC forward current) Diode variation 150 °C 200 °C Common cathode MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) (1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Operating junction and storage temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h TOP, TSTG TJ (2) Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.
2 bypass diode thermal test VBT6045CBP 45 60 30 320 - 40 to + 150  200 UNIT V A A °C °C Revision: 30-Apr-13 1 Document Number: 87963 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@visha...


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