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V30DL50C-M3

Vishay
Part Number V30DL50C-M3
Manufacturer Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Published Apr 15, 2016
Detailed Description www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra ...
Datasheet PDF File V30DL50C-M3 PDF File

V30DL50C-M3
V30DL50C-M3

Overview
www.
vishay.
com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 50 V 300 A 0.
42 V 150 °C TO-263AC (SMPD) Diode variations Dual common cathode MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound...


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