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2N6298

Central Semiconductor
Part Number 2N6298
Manufacturer Central Semiconductor
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Published Apr 15, 2016
Detailed Description 2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c...
Datasheet PDF File 2N6298 PDF File

2N6298
2N6298


Overview
2N6298 2N6299 PNP 2N6300 2N6301 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC 2N6298 2N6300 60 2N6299 2N6301 80 60 80 5.
0 8.
0 16 120 75 -65 to +200 2.
33 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VBE=1.
5V ICEV VCE=Rated VCEO, VBE=1.
5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.
0V BVCEO IC=1...



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