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STU03N20

SamHop Microelectronics
Part Number STU03N20
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Apr 15, 2016
Detailed Description STU03N20 Sa mHop Microelectronics C orp. STD03N20Green Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field E...
Datasheet PDF File STU03N20 PDF File

STU03N20
STU03N20

Overview
STU03N20 Sa mHop Microelectronics C orp.
STD03N20Green Product Ver 1.
0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 200V 3.
28 @ VGS=10V 2A 3.
59 @ VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 200 ±20 2 1.
6 5.
8 4 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice.
1 Jun,03,2014 www.
samhop.
com.
tw STU03N20 STD03N20 Ver 1.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V VGS= ±20V , VDS=0V 200 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=1A VGS=4.
5V , ID=1A VDS=10V , ID=1A VDS=25V,VGS=0V f=1.
0MHz VDD=100V ID=1A VGS=10V RGEN= 6 ohm VDS=100V,ID=1A,VGS=10V VDS=100V,ID=1A,VGS=4.
5V VDS=100V,ID=1A, VGS=10V 1 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM R...


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