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STD102S

SamHop Microelectronics
Part Number STD102S
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Apr 15, 2016
Detailed Description STU102S SamHop Microelectronics Corp. STD102SGreen Product Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effec...
Datasheet PDF File STD102S PDF File

STD102S
STD102S

Overview
STU102S SamHop Microelectronics Corp.
STD102SGreen Product Ver 1.
0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 566 @ VGS=10V 100V 6A 734 @ VGS=4.
5V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TC=25°C TC=70°C IDM -Pulsed c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 100 ±20 6 4.
8 17 2 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice.
1 Jun,09,2014 www.
samhop.
com.
tw STU102S STD102S Ver 1.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.
5V , ID=2.
7A VDS=10V , ID=3A VDS=25V,VGS=0V f=1.
0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=3A,VGS=10V VDS=50V,ID=3A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,I...


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