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MDP12N50F


Part Number MDP12N50F
Manufacturer MagnaChip
Title N-Channel MOSFET
Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performanc...
Features  VDS = 500V  ID = 11.5A  RDS(ON) ≤ 0.7Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching D TO-220 MDP Series TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur...

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MDP12N50 : The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP12N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature.

MDP12N50B : The MDP/F12N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F12N50B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 11.5A RDS(ON) ≤ 0.65Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature .




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