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HFU630

Part Number	HFU630
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Apr 18, 2016
Detailed Description	HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A FEATURES ...
Datasheet	HFU630 PDF File

Overview

HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.
2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25...

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