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AUIRF7647S2TR

Infineon
Part Number AUIRF7647S2TR
Manufacturer Infineon
Description Power MOSFET
Published Apr 18, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF7647S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier Applications ...
Datasheet PDF File AUIRF7647S2TR PDF File

AUIRF7647S2TR
AUIRF7647S2TR


Overview
  AUTOMOTIVE GRADE AUIRF7647S2TR  Advanced Process Technology  Optimized for Class D Audio Amplifier Applications  Low Rds(on) for Improved Efficiency  Low Qg for Better THD and Improved Efficiency  Low Qrr for Better THD and Lower EMI  Low Parasitic Inductance for Reduced Ringing and Lower EMI  Delivers up to 100W per Channel into 8 with No Heatsink  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ.
max.
RG (typical) Qg (typical) 100V 26m 31m 1.
6 14nC    S DG D S Applicable DirectFET® Outline and Substrate Outline  SC DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7647S2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems This HEXFET® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI.
Moreover the DirectFET® packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number   Package Type   Sta...



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