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AUIRF7669L2TR

Infineon
Part Number AUIRF7669L2TR
Manufacturer Infineon
Description Power MOSFET
Published Apr 18, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF7669L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and othe...
Datasheet PDF File AUIRF7669L2TR PDF File

AUIRF7669L2TR
AUIRF7669L2TR

Overview
  AUTOMOTIVE GRADE AUIRF7669L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg (typical) 100V 3.
5m 4.
4m 114A 81nC   D S S GS S S S D S S   Applicable DirectFET® Outline and Substrate Outline  L8 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7669L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential.
The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFE...


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