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AUIRF7759L2TR

International Rectifier
Part Number AUIRF7759L2TR
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 18, 2016
Detailed Description AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC ...
Datasheet PDF File AUIRF7759L2TR PDF File

AUIRF7759L2TR
AUIRF7759L2TR

Overview
AUTOMOTIVE GRADE PD - 96426 AUIRF7759L2TR • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * AUIRF7759L2TR1 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 75V RDS(on) typ.
1.
8mΩ max.
2.
3mΩ ID (Silicon Limited) 160A Qg 200nC SS SS D GS S D S S Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 L 8 DirectFET®ISOMETRIC L4 L6 L8 Description The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.
7 mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These feat...


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