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AUIRL7766M2TR

International Rectifier
Part Number AUIRL7766M2TR
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 18, 2016
Detailed Description PD - 97648 AUTOMOTIVE GRADE AUIRL7766M2TR AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Techn...
Datasheet PDF File AUIRL7766M2TR PDF File

AUIRL7766M2TR
AUIRL7766M2TR

Overview
PD - 97648 AUTOMOTIVE GRADE AUIRL7766M2TR AUIRL7766M2TR1 Automotive DirectFET® Power MOSFET ‚ • Advanced Process Technology • Optimized for Automotive DC-DC and other Heavy Load Applications • Logic Level Gate Drive • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg 100V 8.
0mΩ 10mΩ 51A 44nC SS D G SS D M4 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.
7mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make t...


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