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BF620

PLANETA
Part Number BF620
Manufacturer PLANETA
Description NPN Silicon High Voltage Medium-Power Transistor
Published Apr 18, 2016
Detailed Description PLANETA BF620 The Small-signal NPN Silicon High Voltage Medium-Power Transistor DESCRIPTION The BF620 is an NPN silico...
Datasheet PDF File BF620 PDF File

BF620
BF620

Overview
PLANETA BF620 The Small-signal NPN Silicon High Voltage Medium-Power Transistor DESCRIPTION The BF620 is an NPN silicon epitaxial transistor designed for application as a video output to drive color CRT, telephony, professional communication equipment and other high voltage applications.
It has dynamic range and good current characteristic.
This high voltage transistor in 3-Pin mini power plastic package SOT89 offers superior quality and performance at low cost.
FEATURES Ø Low Saturation Voltages V =CE(sat) 0.
6 V V =BE(sat) 0.
9 V Ø High Breakdown Voltages V =(BR)CBO 300 V V =(BR)CEO 300 V Ø Low Collector Current IC= 50 mA Ø Complementary to BF621 1 2 3 1 – Base 2 – Collector 3 – Emitter 2 JEDEC EIAJ GOST Weight: SOT89 TO-243 SC-62 KT-47 0.
055g ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Rating Symbol Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Operating Junction Temperature Range Storage Temperature Range VCEO VCBO VEBO IC ICM PC TJMAX TOPR TSTG Value 300 300 5 50 100 1.
0 150 -60 to +100 -65 to +150 Unit V V V mA mA W °C °C °C ORDERING INFORMATION Device BF620 BF620-T1 Marking Package DC SOT-89 DC SOT-89 Quantity Packing Style 5 Kpcs / plastic bags 1 Kpcs / Reel In bulk Embossed tape 12-mm wide 7'' dia.
Pin 2 (Collector) towards the windung.
Perforation on the right.
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © August 2001 Rev 1 Ph.
/Fax: +7–816–2231736 E-mail: planeta@novgorod.
net http://www.
novgorod.
net/~planeta BF620 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ DC CHARACTERISTICS Collector – Base Cutoff Current, IE= 0mA, VCB=200V Emitter – Base Cutoff Current, IC= 0mA, VEB= 5V Collector – Base Breakdown Voltage, IC= 10µA, IE= 0mA Collector – Emitter Breakdown Voltage, IC= 1mA, IB= 0mA Emitter – Base Breakdown Voltage, IE=100µA, IC= 0mA DC Current Gain, ...


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