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LSI1012N3T5G

LRC
Part Number LSI1012N3T5G
Manufacturer LRC
Description N-Channel 1.8-V (G-S) MOSFET
Published Apr 18, 2016
Detailed Description N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High...
Datasheet PDF File LSI1012N3T5G PDF File

LSI1012N3T5G
LSI1012N3T5G

Overview
N-Channel 1.
8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.
8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.
7 W D Low Threshold: 0.
8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers ORDERING INFORMATION Device Marking Shipping LSI1012N3T5G S-LSI1012N3T5G A2 10000/Tape&Reel LESHAN RADIO COMPANY, LTD.
LSI1012N3T5G S-LSI1012N3T5G 3 21 SOT883 3 Drain Gate 1 Source 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Vo...


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