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LSI1013XT1G

LRC
Part Number LSI1013XT1G
Manufacturer LRC
Description P-Channel 1.8-V (G-S) MOSFET
Published Apr 18, 2016
Detailed Description P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: ...
Datasheet PDF File LSI1013XT1G PDF File

LSI1013XT1G
LSI1013XT1G


Overview
P-Channel 1.
8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD.
LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.
8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.
2 W D Low Threshold: 0.
8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers ORDERING INFORMATION Device Marking Shipping LSI1013XT1G S-LSI1013XT1G LSI1013XT3G S-LSI1013XT3G B B 3000/Tape&Reel 10000/Tape&Reel SC-89 Gate 1 3 Drain Source 2 (Top View) M MARKING DIAGRAM 3 B 12 B = Specific Device Code M = Month Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 Maximum Power Dissipationb for SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25_C TA = 85_C TA = 25_C TA = 85_C TA = 25_C TA = 85_C VDS VGS ID IDM IS PD TJ, Tstg ESD -400 -300 -275 175 90 275 160 -20 "6 -350 -275 -1000 -250 150 80 250 140 −55 to 150 2000 Notes d.
Pulse width limited by maximum junction temperature.
e.
Surface Mounted on FR4 Board.
Unit V mA mW _C V Rev .
O 1/6 LESHAN RADIO COMPANY, LTD.
LSI1013XT1G , S-LSI1013XT1G SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resi...


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