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V60170G-M3

Vishay
Part Number V60170G-M3
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Apr 18, 2016
Detailed Description www.vishay.com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra L...
Datasheet PDF File V60170G-M3 PDF File

V60170G-M3
V60170G-M3

Overview
www.
vishay.
com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TMBS ® TO-220AB V60170G 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package 2 x 30 A 170 V 210 A 0.
72 V 175 °C TO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching pow...


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