DatasheetsPDF.com

INJ0011AC1

Isahaya Electronics Corporation
Part Number INJ0011AC1
Manufacturer Isahaya Electronics Corporation
Description High speed switching Silicon P-channel MOSFET
Published Apr 19, 2016
Detailed Description ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET. Th...
Datasheet PDF File INJ0011AC1 PDF File

INJ0011AC1
INJ0011AC1

Overview
ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET.
This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance.
FEATURE ・Input impedance is high, and not necessary to consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=-1.
0～-2.
0V ・Low on Resistance.
RDS(on)=7.
0Ω(TYP)＠ID=-100mA, VGS=-4.
0V RDS(on)=4.
8Ω(TYP)＠ID=-100mA, VGS=-10V ・High speed switching.
・Small package for easy mounting.
0.
5 1.
2 0.
8 0.
4 0.
4 OUTLINE DRAWING INJ0011AT2(PRELIMINARY) 0.
2 0.
8 0.
2 Unit：mm INJ0011AM1 2.
1 0.
425 1.
25 0.
425 0.
25 2.
0 1.
3 0.
65 0.
65 0.
3 ① ②③ ① ②③ 0.
9 0.
7 0～0.
1 0.
15 APPLICATION High speed switching , Analog switching www.
DataSheet4U.
com EQUIVALENT CIRCUIT D G S JEITA, JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0011AU1 1.
6 0.
4 0.
8 0.
4 ① ②③ JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0011AC1 2.
5 0.
5 1.
5 0.
5 ① ②③ 1.
6 1.
0 0.
5 0.
5 0.
3 2.
9 1.
90 0.
95 0.
95 0.
4 0.
7 0.
55 0～0.
1 0.
15 1.
1 0.
8 0～0.
1 0.
16 JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN JEITA：SC-59 JEDEC：Similar to TO-236 T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ISAHAYA ELECTRONICS CORPORATION ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶDSS ＶGSS ＩD ＰＤ Ｔch Ｔｓｔｇ Drain-source voltage Gate-source voltage Drain current Total power （Ta=25℃） dissipation Channel temperature Range of Storage temperature INJ0001AT2 125（※） +125 -55～+125 RATING INJ0001AU1 INJ0001AM1 -50 ±20 -100 INJ0001AC1 150 200 +150 -55～+150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） ※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
SYMBOL PARAMETER TEST CONDITION V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss tON tOFF Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)