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CGH35240F

Cree
Part Number CGH35240F
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gal...
Datasheet PDF File CGH35240F PDF File

CGH35240F
CGH35240F

Overview
CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.
1-3.
5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1 Typical Performance Over 3.
1-3.
5GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.
1 GHz 3.
2 GHz 3.
3 GHz 3.
4 GHz Output Power 250 240 225 225 3.
5 GHz 220 Gain 12.
1 11.
9 11.
6 11.
5 11.
4 Power Added Efficiency 60 59 57 52 Note: Meas...


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