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CGH55030F1

Cree
Part Number CGH55030F1
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride ...
Datasheet PDF File CGH55030F1 PDF File

CGH55030F1
CGH55030F1

Overview
CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.
5-5.
8 GHz WiMAX and BWA amplifier applications.
The transistor is available in both screw-down, flange and solder-down, pill packages.
Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.
9 - 5.
5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616 Typical Performance Over 5.
5-5.
8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.
50 GHz 5.
65 GHz Small Signal Gain 9.
5 10.
0 5.
80 GHz 9.
5 Units dB EVM at PAVE = 29 dBm 1.
1 0.
9 0.
9 % EVM at PAVE = 36 dBm 2.
2 1.
4 1.
4 % Drain Efficiency at PAVE = 4 W 23 24 25 % Input Return Loss 10.
8 22 9.
3 dB Note: Measured in the CGH55030-AMP amplifier circuit, under 802.
1...


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