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CGHV27100

Cree
Part Number CGHV27100
Manufacturer Cree
Description GaN HEMT
Published Apr 19, 2016
Detailed Description CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron m...
Datasheet PDF File CGHV27100 PDF File

CGHV27100
CGHV27100

Overview
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.
5 - 2.
7 GHz LTE, 4G Telecom and BWA amplifier applications.
The transistor is input matched and supplied in a ceramic/ metal pill and flange packages.
PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1 Typical Performance Over 2.
5 - 2.
7 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.
5 GHz 2.
6 GHz 2.
7 GHz Gain @ 44 dBm 18.
1 18.
0 17.
9 ACLR @ 44 dBm -37.
0 -37.
0 -37.
0 Drain Efficiency @ 44 dBm 34.
0 33.
5 32.
0 Note: Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.
5 dB @ 0.
01% Probability on CCDF, VDD = 50 V, IDS = 500 mA.
Units dB dBc % Features • 2.
5 - 2.
7 GHz Operation • 18.
0 dB Gain • -37 dBc ACLR at 25 W PAVE • 33 % Effi...


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