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SMG2306NE

SeCoS
Part Number SMG2306NE
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Produ...
Datasheet PDF File SMG2306NE PDF File

SMG2306NE
SMG2306NE


Overview
Elektronische Bauelemente SMG2306NE 3.
5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process.
Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Low gate charge  Fast switching  Miniature SC-59 surface mount package saves board space.
APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 Max.
3.
10 3.
00 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range ID @ TA=25°C ID @ TA=70°C PD @ TA=25°C PD @ TA=70°C Symbol VDS VGS ID IDM IS PD Tj, Tstg Thermal Resistance Ratings Maximum Junction to Ambient 1 Notes: 1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t ≦ 10 sec Steady State RJA Ratings 30 ±20 3.
5 2.
8 16 1.
25 1.
3 0.
8 -55 ~ 150 100 166 Unit V V A A A A W W °C °C / W http://www.
SeCoSGmbH.
com/ 12-Apr-2011 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2306NE 3.
5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.
FET ELECTRICAL CHARACTERISTICS (...


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