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SMG2358N

SeCoS
Part Number SMG2358N
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2358N 3.1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Produc...
Datasheet PDF File SMG2358N PDF File

SMG2358N
SMG2358N

Overview
Elektronische Bauelemente SMG2358N 3.
1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.
FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves board space.
 Fast switching speed.
 High performance trench technology.
PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 Max.
3.
10 3.
00 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C VGS ID IDM IS PD TJ, TSTG Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦10 sec Steady State Notes 1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RθJA Ratings 60 ±20 3.
1 2.
5 15 1.
9 1.
3 0.
8 -55 ~ 150 100 166 Unit V V A A A W °C °C / W http://www.
SeCoSGmbH.
com/ 29-Jul-2013 Rev.
D Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2358N 3.
1 A, 60 V, RDS(ON) 92 m N-Channel Enhancement Mode Mos.
FET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit ...


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