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SMG2390N

SeCoS
Part Number SMG2390N
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS Compliant Pro...
Datasheet PDF File SMG2390N PDF File

SMG2390N
SMG2390N

Overview
Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.
FET 1.
1 A, 150 V, RDS(ON) 0.
700  RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES  Low RDS(on) provides higher efficiency and extends battery life.
 Low thermal impedance copper leadframe SC-59 saves board space.
 Fast switching speed.
 High performance trench technology.
PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) ( 0.
700@VGS= 10V 1.
200@VGS= 5.
5V ID(A) 1.
1 0.
8 SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
2.
70 2.
25 1.
30 Max.
3.
10 3.
00 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD Tj, Tstg Ratings Maximum 150 ±20 1.
1 ±10 1.
1 1.
30 -55 ~ 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a Notes t ≦ 10 sec Steady State a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
Symbol RJA Typ Max 93 110 130 150 Unit V V A A A W °C Unit °C / W http://www.
SeCoSGmbH.
com/ 20-Aug-2010 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 2 Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.
FET 1.
1 A, 150 V, RDS(ON) 0.
700  ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise sp...


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