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TSM042N03CS

Taiwan Semiconductor
Part Number TSM042N03CS
Manufacturer Taiwan Semiconductor
Description 30V N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Dra...
Datasheet PDF File TSM042N03CS PDF File

TSM042N03CS
TSM042N03CS

Overview
TSM042N03CS 30V N-Channel Power MOSFET SOP-8 Pin Definition: 1.
Source 8.
Drain 2.
Source 7.
Drain 3.
Source 6.
Drain 4.
Gate 5.
Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.
5V 30 4.
2 6 Qg 24 Unit V mΩ nC Ordering Information Part No.
Package Packing TSM042N03CS RLG SOP-8 2.
5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 2) Power Dissipation @ TC = 25oC Tc=25ºC Tc=100ºC VGS ID IDM EAS IAS PD Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 30 ±20 30 19 120 125 50 7 175 -55 to +175 Limit 62 Unit V V A A A mJ A W ºC oC Unit oC/W 1/5 Version: A14 TSM042N03CS 30V N-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS = 0V, ID = 250µA VGS = 10V, ID = 12A VGS = 4.
5V, ID = 6A BVDSS 30 -- -- V -- 3.
8 4.
2 RDS(ON) mΩ 5.
2 6 Gate Threshold Voltage VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 3) Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge (Note 3,4) Gate-Drain Charge (Note 3,4) VDS = 30V, VGS = 0V VDS = 24V, TJ = 125ºC VGS = ±20V, VDS = 0V VDS = 10V, ID = 6A VDS = 15V, ID = 12A, VGS = 4.
5V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.
0MHz Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Tur...


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