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TSM080N03PQ56

Taiwan Semiconductor
Part Number TSM080N03PQ56
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM080N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. ...
Datasheet PDF File TSM080N03PQ56 PDF File

TSM080N03PQ56
TSM080N03PQ56

Overview
TSM080N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1.
Source 8.
Drain 2.
Source 7.
Drain 3.
Source 6.
Drain 4.
Gate 5.
Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 30 8 12.
5 7.
5 Ordering Information Part No.
Package Packing TSM080N03PQ56 RLG PDFN56 2.
5kpcs / 13” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Unit V mΩ nC N-Channel MOSFET Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25℃ Operating Junction Temperature Storage Temperature Range Tc = 25℃ Tc = 100℃ VDS VGS ID IDM EAS PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Case Thermal Re...


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