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TSM085N03PQ33

Taiwan Semiconductor
Part Number TSM085N03PQ33
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM085N03PQ33 30V N-Channel Power MOSFET PDFN33 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. ...
Datasheet PDF File TSM085N03PQ33 PDF File

TSM085N03PQ33
TSM085N03PQ33

Overview
TSM085N03PQ33 30V N-Channel Power MOSFET PDFN33 Pin Definition: 1.
Source 8.
Drain 2.
Source 7.
Drain 3.
Source 6.
Drain 4.
Gate 5.
Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.
5V Qg 30 8.
5 13 7.
5 Ordering Information Part No.
Package Packing TSM085N03PQ33 RGG PDFN33 5kpcs / 13” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Unit V mΩ nC Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM EAS PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient Thermal Resistance - Ju...


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