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TSM210N06

Taiwan Semiconductor
Part Number TSM210N06
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(...
Datasheet PDF File TSM210N06 PDF File

TSM210N06
TSM210N06

Overview
TO-220 Pin Definition: 1.
Gate 2.
Drain 3.
Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.
1 @ VGS =10V ID (A) 210 Features ● Advanced Trench Technology ● Low RDS(ON) 3.
1mΩ (Max.
) ● Low gate charge typical @ 160nC (Typ.
) ● Low Crss typical @ 300pF (Typ.
) Ordering Information Part No.
TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.
3mH IAS, IAR Avalanche Energy, L=0.
3mH EAS, EAR TC=25°C Maximum Power Dissipation TC=70°C TA=25°C PD TA=70°C Storage Temperature Range TSTG Operating Junction Temperature Range TJ * Limited by maximum junction temperature Limit 60 ±20 210 170 19 15.
2 650 113 1900 250 160 2 1.
3 -55 to +150 -55 to +150 Thermal Pe...


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