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TSM250N02DCQ

Taiwan Semiconductor
Part Number TSM250N02DCQ
Manufacturer Taiwan Semiconductor
Description Dual N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM250N02DCQ Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 5.8A, 25mΩ Features ● Halogen-Free according to IEC...
Datasheet PDF File TSM250N02DCQ PDF File

TSM250N02DCQ
TSM250N02DCQ

Overview
TSM250N02DCQ Taiwan Semiconductor Dual N-Channel Power MOSFET 20V, 5.
8A, 25mΩ Features ● Halogen-Free according to IEC 61249-2-21 ● Suited for 1.
8V drive applications ● Low profile package ● RoHS Compliant APPLICATION ● Battery Pack ● Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.
5V 25 RDS(on) (max) VGS = 2.
5V 35 mΩ VGS = 1.
8V 55 Qg 7.
7 nC TDFN 2x2 Notes: Moisture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C ID TC = 100°C IDM 5.
8 3.
48 23.
2 Total Power Dissipation @ TC = 25°C PDTOT 0.
62 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 UNIT V V A A W °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance RӨJA 200 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances.
RӨJA is guaranteed by design while RӨCA is determined by the user’s board design.
RӨJA shown below for single device operation on FR-4 PCB in still air.
, 1 Version: C2212 TSM250N02DCQ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static (Note 3) CONDITIONS SYMBOL MIN Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 20 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 0.
4 Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- Zero Gate Voltage Drain Current VDS=16V, VGS=0V VGS = 4.
5V, ID = 4A IDSS -- -- Drain-Source On-State Resistance VGS = 2.
5V, ID = 3A VGS = 1.
8V, ID = 2A RDS(on) -- -- Forward Transconductance Dynamic (Note 4) VDS=10V, ID=3A gfs -- Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10V, ID = 4A, VGS = 4.
5V Qg -- Qgs -- Qgd -- Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching (Note ...


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