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TSM60N900

Taiwan Semiconductor
Part Number TSM60N900
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description ITO-220 TO-252 (DPAK) TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drai...
Datasheet PDF File TSM60N900 PDF File

TSM60N900
TSM60N900

Overview
ITO-220 TO-252 (DPAK) TSM60N900 600V, 4.
5A, 0.
9Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1.
Gate 2.
Drain 3.
Source Key Parameter Performance Parameter Value VDS 600 RDS(on) (max) Qg 0.
9 9.
7 Unit V Ω nC Features ● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance Application ● Power Supply.
● Lighting Ordering Information Part No.
Package Packing TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.
5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C Total Power Dissipation @ TC = 25°C Single Pulsed Avala...


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