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TSM85N10

Taiwan Semiconductor
Part Number TSM85N10
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM85N10 100V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(...
Datasheet PDF File TSM85N10 PDF File

TSM85N10
TSM85N10

Overview
TO-220 Pin Definition: 1.
Gate 2.
Drain 3.
Source TSM85N10 100V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 10 @ VGS =10V ID (A) 81 Features ● Advanced Trench Technology ● Low RDS(ON) 10mΩ (Max.
) ● Low gate charge typical @ 154nC (Typ.
) ● Low Crss typical @ 170pF (Typ.
) Ordering Information Part No.
TSM85N10CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.
3mH Avalanche Energy, L=0.
3mH Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range TC=25°C TC=70°C TA=25°C TA=70°C TC=25°C TC=70°C TA=25°C TA=70°C VDS VGS ID IDM IAS, IAR EAS, EAR PD TSTG TJ * Limited by maximum junction temperature Limit 100 ±25 81 65 8.
7 7 320 64 620 210 130 2.
4 1.
5 -55 to +150 -55 to +150 Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA Limit 0.
6 52.
5 Unit V V A A A mJ W °C °C Unit oC/W oC/W 1/4 Version: A12 TSM85N10 100V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage VGS = 0V, ID = 250uA VGS = 10V, ID = 40A VDS = VGS, ID = 250uA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V BVDSS RDS(ON) VGS(TH) IDSS IGSS 100 -2 --- -- -- V 9 10 mΩ 3 4V -- 1 uA -- ±100 nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 30V, ID = 40A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.
0MHz Qg -- 154 -Qgs -- 4 -- nC Qgd -- 45 -Ciss -- 3900 -Coss -- 300 -- pF Crss -- 170 -- Turn-On D...


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