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RU1HP55R

Ruichips
Part Number RU1HP55R
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 25, 2016
Detailed Description RU1HP55R P-Channel Advanced Power MOSFET Features • -100V/-55A, RDS (ON) =40mΩ(Typ.)@VGS=-10V • Low On-Resistance • Sup...
Datasheet PDF File RU1HP55R PDF File

RU1HP55R
RU1HP55R

Overview
RU1HP55R P-Channel Advanced Power MOSFET Features • -100V/-55A, RDS (ON) =40mΩ(Typ.
)@VGS=-10V • Low On-Resistance • Super High Dense Cell Design • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications •Inverters Pin Description G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S P-Channel MOSFET Rating Unit TC=25°C -100 ±25 175 -55 to 175 -55 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C -220 -55 -39 176 88 0.
85 62.
5 A A W °C/W °C/W 400 mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– MAR.
, 2013 1 www.
ruichips.
com RU1HP55R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1HP55R Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=-10V, IDS=-55A Diode Characteristics -100 -1 -30 -2 -4 ±100 40 50 VSD④ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=-55A, VGS=0V ISD=-55A, dlSD/dt=100A/µs -1.
2 150 500 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off F...


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