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RU30C8H

Ruichips
Part Number RU30C8H
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU30C8H Complementary Advanced Power MOSFET Features • N-Channel 30V/8A, RDS (ON) =12mΩ(Typ.) @ VGS=10V RDS (ON) =16mΩ(...
Datasheet PDF File RU30C8H PDF File

RU30C8H
RU30C8H

Overview
RU30C8H Complementary Advanced Power MOSFET Features • N-Channel 30V/8A, RDS (ON) =12mΩ(Typ.
) @ VGS=10V RDS (ON) =16mΩ(Typ.
) @ VGS=4.
5V • P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ.
) @ VGS=-10V RDS (ON) =25mΩ (Typ.
) @ VGS=-4.
5V • Reliable and Rugged • ESD Protected • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed S1 S2 Complementary MOSFET N-Channel P-Channel Unit TA=25°C 30 -30 ±12 ±12 150 150 -55 to 150 -55 to 150 2.
7 -2.
5 V °C °C A TA=25°C TA=25°C TA=70°C TA=25°C TA=70°C 32 8 6.
5 2 1.
3 TBD 62.
5 -28 -7 -5.
6 2 1.
3 TBD 62.
5 A A W °C/W °C/W TBD TBD mJ Ruichips Semiconductor Co.
, Ltd Rev.
A– DEC.
, 2013 1 www.
ruichips.
com RU30C8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30C8H Min.
Typ.
Max.
Static Characteristics BVDSS VGS=0V, IDS=250µA Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA VDS=30V, VGS=0V TJ=125°C IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V VGS(th) Gate Threshold Voltage TJ=125°C VDS=VGS, IDS=250µA VDS=VGS, IDS=-250µA IGSS Gate Leakage Current VGS=±12V, VDS=0V VGS=±12V, VDS=0V VGS=10V, IDS=8A RDS(ON)⑤ VGS=-10V, IDS=-6A Drain-Source On-state Resistance VGS=4.
5V, IDS=7A VGS=-4.
5V, IDS=-5A N 30 P -30 1 N 30 -1 P -30 N 1.
2 1.
8 2.
4 P -1.
2 -1.
8 -2.
4 N ±10 P ±10 N 12 15 P 18 25 N 16 25 P 25 35 Diode Characteristics ⑤ VSD Diode ...


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