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RU30E40L

Ruichips
Part Number RU30E40L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU30E40L N-Channel Advanced Power MOSFET MOSFET Features • 30V/60A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VG...
Datasheet PDF File RU30E40L PDF File

RU30E40L
RU30E40L

Overview
RU30E40L N-Channel Advanced Power MOSFET MOSFET Features • 30V/60A, RDS (ON) =5mΩ(Typ.
)@VGS=10V RDS (ON) =10mΩ(Typ.
)@VGS=4.
5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management.
Pin Description TO252 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=100°C PD Maximum Power Dissipation TC=25°C TC=100°C RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUN.
, 2012 Rating 30 ±16 175 -55 to 175 ①...


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