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RU55L18L

Ruichips
Part Number RU55L18L
Manufacturer Ruichips
Description P-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU55L18L P-Channel Advanced Power MOSFET MOSFET Features • -60V/-16A, RDS (ON) =100mΩ(tpy.)@VGS=-10V RDS (ON) =125mΩ(tp...
Datasheet PDF File RU55L18L PDF File

RU55L18L
RU55L18L

Overview
RU55L18L P-Channel Advanced Power MOSFET MOSFET Features • -60V/-16A, RDS (ON) =100mΩ(tpy.
)@VGS=-10V RDS (ON) =125mΩ(tpy.
)@VGS=-4.
5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management • Load Switch • DC/DC Converter Absolute Maximum Ratings Pin Description TO252 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating -60 ±20 175 -55 to 175 -16 ① -64 -16 -11 50 25 3 72 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
B– AUG.
, 2012 www.
ruichips.
com RU55L18L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU55L18L Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V, IDS=-250µA VDS= -60V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±16V, VDS=0V -60 -1 V -1 µA -30 -3 V ±10 µA ③ RDS(ON) Drain-Source On-state Resistance VGS= -10V, IDS=-9A VGS= -4.
5V, IDS=-7A 100 115 mΩ 125 150 mΩ Diode Characteristics ③ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ④ Gate Charge Characteristics Qg Total Gat...


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