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RU5H5P

Ruichips
Part Number RU5H5P
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU5H5P N-Channel Advanced Power MOSFET Features • 500V/5A, RDS (ON) =1200mΩ(Typ.)@VGS=10V • Super High Dense Cell Desig...
Datasheet PDF File RU5H5P PDF File

RU5H5P
RU5H5P

Overview
RU5H5P N-Channel Advanced Power MOSFET Features • 500V/5A, RDS (ON) =1200mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Fast Switching • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High efficiency switch mode power supplies • Lighting Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co.
, Ltd Rev.
B– MAR.
, 2013 1 GDS TO220F D G S N-Channel MOSFET Rating Unit TC=25°C 500 ±30 150 -55 to 150 5 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 20 A 5 A 3.
5 25 W 10 5 °C/W 62.
5 °C/W 180 mJ www.
ruichips.
com RU5H5P Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU5H5P Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=500V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±30V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=2.
25A Diode Characteristics 500 1 30 234 ±100 1200 1500 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=4.
5A, VGS=0V ISD=4.
5A, dlSD/dt=100A/µs 1.
2 250 2.
4 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics⑤ VGS=0V...


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