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RU6H11R

Ruichips
Part Number RU6H11R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description Features •600V/10A, RDS (ON) =0.75Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ. 12pF) • Extremely high dv/...
Datasheet PDF File RU6H11R PDF File

RU6H11R
RU6H11R

Overview
Features •600V/10A, RDS (ON) =0.
75Ω (Typ.
) @ VGS=10V • Gate charge minimized • Low Crss( Typ.
12pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available RU6H11R N-Channel Advanced Power MOSFET MOSFET Pin Description TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A – JUL.
, 2012 Rating 600 ±30 150 -55 to 150 10 ① 40 ① 10 ① ...


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