DatasheetsPDF.com

MTE130N20KJ3

CYStech
Part Number MTE130N20KJ3
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 27, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec. No. : C952J3 Issued Date : 2014.02...
Datasheet PDF File MTE130N20KJ3 PDF File

MTE130N20KJ3
MTE130N20KJ3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec.
No.
: C952J3 Issued Date : 2014.
02.
27 Revised Date : 2014.
03.
05 Page No.
: 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD Diode Protected Gate • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 142mΩ Symbol MTE130N20KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE130N20KJ3-0-T3-G Package Shipping TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE130N20KJ3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C952J3 Issued Date : 2014.
02.
27 Revised Date : 2014.
03.
05 Page No.
: 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Avalanche Current Avalanche Energy @ L=100μH, ID=9A, VDD=50V Power Dissipation TC=25°C TC=100°C Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) (Note 1) (Note 3) (Note 4) (Note 4) (Note 3) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Symbol VDS VGS ID IDM IDSM IAS EAS PD PDSM Tj, Tstg Limits 200 ±20 18 13 30 1.
9 1.
5 10 4 125 62.
5 2 1.
3 -55~+175 Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 2) Thermal Resistance, Junction-to-ambient, max (Note 4) Symbol Rth,j-c Rth,j-a Value 1.
2 62.
5 90 Unit °C/W °C/W °C/W Note : 1.
The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)