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RQK0201QGDQA

Renesas
Part Number RQK0201QGDQA
Manufacturer Renesas
Description N-Channel MOSFET
Published Apr 28, 2016
Detailed Description RQK0201QGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID...
Datasheet PDF File RQK0201QGDQA PDF File

RQK0201QGDQA
RQK0201QGDQA

Overview
RQK0201QGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ (VGS = 4.
5 V, ID = 2.
4 A) • Low drive current • High speed switching • 2.
5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “QG”.
Preliminary Datasheet R07DS0301EJ0500 Rev.
5.
00 Jan 10, 2014 3 D G 1.
Source 2 2.
Gate 3.
Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings 20 ±12 4.
5 15 4.
5 0.
8 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C R07DS0301EJ0500 Rev.
5.
00 Jan 10, 2014 Page 1 of 7 RQK0201QGDQA Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakd...


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