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MTB1D7N03ATH8

CYStech
Part Number MTB1D7N03ATH8
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : 2019.11.05 Page No. : 1/9 N-Chann...
Datasheet PDF File MTB1D7N03ATH8 PDF File

MTB1D7N03ATH8
MTB1D7N03ATH8

Overview
CYStech Electronics Corp.
Spec.
No.
: C948H8 Issued Date : 2014.
06.
06 Revised Date : 2019.
11.
05 Page No.
: 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.
5V, ID=20A 30V 90A 1.
5 mΩ(typ) 2.
1 mΩ(typ) Symbol MTB1D7N03ATH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB1D7N03ATH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB1D7N03ATH8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C948H8 Issued Date : 2014.
06.
06 Revised Date : 2019.
11.
05 Page No.
: 2/9 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V Continuous Drain Current @ TC=100C, VGS=10V Continuous Drain Current @ TA=25C, VGS=10V Continuous Drain Current @ TA=70C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=30A, RG=25Ω TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS PD Tj, Tstg Limits 30 ±20 90 57 20 16 360 *1 77 450 50 20 2.
5 1.
6 -55~+150 Unit V A mJ W C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.
5 C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *3 C/W Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle≤1% 3.
Surface mounted on 1 in²copper pad of FR-4 board, t≤10s; 125C/W when mounted on minimum copper pad.
Characteristics (TC=25C, unless othe...


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