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MTB4D0N03BQ8

CYStech
Part Number MTB4D0N03BQ8
Manufacturer CYStech
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB4D0N03BQ8 Spec. No. : C092Q8 Issued Date : 2015.10...
Datasheet PDF File MTB4D0N03BQ8 PDF File

MTB4D0N03BQ8
MTB4D0N03BQ8


Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTB4D0N03BQ8 Spec.
No.
: C092Q8 Issued Date : 2015.
10.
05 Revised Date : Page No.
: 1/9 BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=18A RDS(ON)@VGS=4.
5V, ID=10A 30V 17.
5A 22.
0A 4.
2 mΩ(typ) 6.
0mΩ(typ) Description The MTB4D0N03BQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package Symbol MTB4D0N03BQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTB4D0N03BQ8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C092Q8 Issued Date : 2015.
10.
05 Revised Date : Page No.
: 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=17.
5A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH TC=25 °C Total Power Dissipation TC=100 °C TA=25 °C TA=70 °C VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM Operating Junction and Storage Temperature Tj, Tstg Note : *1.
Pulse width limited by maximum junction temperature.
*2.
100% tested by conditions of L=0.
5mH, IAS=13A, VGS=10V, VDD=15V *3.
Duty cycle ≤ 1% Limits 30 ±20 22 13.
9 17.
5 14.
0 88 *1 17.
5 153 *2 1.
6 *3 5.
0 2.
0 3.
1 2.
0 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (No...


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