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MTDN4228Q8

CYStech
Part Number MTDN4228Q8
Manufacturer CYStech
Description Dual N-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C395Q8 Issued Date : 2006.10.25 Revised Date : Page No. : 1/3 Dual N-CHANNEL ENH...
Datasheet PDF File MTDN4228Q8 PDF File

MTDN4228Q8
MTDN4228Q8

Overview
CYStech Electronics Corp.
Spec.
No.
: C395Q8 Issued Date : 2006.
10.
25 Revised Date : Page No.
: 1/3 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN4228Q8 Description The MTDN4228Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features • RDS(ON)=40mΩ@VGS=4.
5V, ID=4A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free package Equivalent Circuit MTDN4228Q8 Outline SOP-8 G：Gate S：Source D：Drain MTDN4228Q8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C395Q8 Issued Date : 2006.
10.
25 Revised Date : Page No.
: 2/3 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
2.
Pulse width limited by maximum junction temperature.
Limits 30 ±20 6.
8 5.
5 40 2 0.
016 -55~+150 -55~+150 62.
5 Unit V V A A A W W / °C °C °C °C/W Electrical Characteristics (Ta=25°C) Symbol Min.
Typ.
Max.
BVDSS VGS(th) IGSS IDSS *RDS(ON) 30 1 - - --3 - ±100 -1 - 26 - 40 *GFS Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd *VSD - 15 - - 580 930 - 150 - 108 - 10 - 9- 18 - 6- 9 15 - 2- 6- - 1.
3 Unit Test Conditions V VGS=0, ID=250μA V VDS=VGS, ID=-250μA nA VGS=±20V, VDS=0 μA VDS=30V, VGS=0 mΩ ID=6A, VGS=10V ID=4A, VGS=4.
5V S VDS=10V, ID=5A pF VDS=25V, VGS=0, f=1MHz ns ns VDD=15V, ID=1A, ns VGS=10V, RGEN=3.
3Ω, RD=15Ω ns nC nC nC VDS=24V,...


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